Crucial DDR5 Laptop Memory can empower your computer to transfer 50% more data than DDR4 at launch, resulting in faster load times, file transfers, downloads, refresh rates and less lag time. 22mm2. 1 V to the DIMM ICs. 16, 24Gb. DDR5 SODIMM core data sheet •262-pin, DDR5 small outline dual in-line memory module (DDR5 SODIMM) •Fast data transfer rate: PC5-4800, PC5-5600 •16GB (2Gig x 64) •Single-rank •32 internal banks; 8 groups of 4 banks each Figure 1: 262-Pin DDR5 SODIMM (R/C-D0) Notes:1. Experience LRDIMM, the best solution for achieving high density with high. It is a SODIMM and conforms to the industry standard DDR5 SODIMM layout of 262 pins. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. Refer to the functional block diagram in the module data sheet addendum for a specific MPN. S - SAMSUNG MODULE SPEED N4: DDR5-4800 @ CL40 VL: Lead-free/RoHS . “We are. * 모든 제품 Spec은 내부결과를 반영한 것이고, 사용자 시스템 구성에 따라 변동될 수 있습니다. in this next-level package. (Photo: Business Wire) May 18, 2021 09:00 PM Eastern Daylight Time. 07. * 삼성전자는 사전 통지 없이 언제라도 제품 이미지와. SK Hynix's 18GB LPDDR5 module integrates multiple memory devices and supports a data transfer rate of 6400 Mbps, the highest speed bin supported by the LPDDR5 specification. Samsung Electronics's K4G80325FC-HC25 is a dram chip gddr5 sdram 8gbit 256mx32 170-pin fbga. GDDR5 K4G80325FB-HC25 (8Gb). 2 Gbps and a pin clock speed of 6,400 Mbps. 1V), VDDQ (1. Speed. com, a global distributor of electronics components. Samsung 850 EVO 250GB: Display(s) 2x Oldell 24" 1920x1200: Case: Bitfenix Nova white windowless non-mesh. In Store ( view ) $35. Samsung is also working with data center and cloud providers around the world to better accommodate the need for greater memory. Optional clock gating available for low-power control. Price (USD): $30. 4K and 6K content to life on high-resolution displays. DDR5 memory uses 13% less energy than the previous generation, and that is especially important as the global data center market is growing at a rate of 6. Image Sensor ISOCELL HMX ISOCELL GH1. Best sellers of Desktop Memory. Use Samsung Semiconductor's product support tools to find technical resources that gets you straight to the information you need on. SAMSUNG 980 PRO SSD 1TB PCIe 4. 1V being lowered from 1. The reduced power consumption gives substantial power savings and allows operation at higher speeds without higher power and cooling requirements. Faster, more efficient processing. Clear. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. Table 1 shows a comparison of the first DDR5 devices released from Micron, Samsung, and SK Hynix. SODIMM DDR5 4800 8G Page 4 of 21 1. 2 SSDs: Aligned for Speed. 12pkg/system application. DDR5’s increased memory bandwidth, channel throughput and power regulation enable multicore CPUs to meet increased computing needs in client applications. Condition: Refurbished. DDR5 ushers indata-centric innovation. M321R8GA0BB0-CQK (DDR5). With maximum data transfer speeds of up to 4,800Mbps, Samsung’s DDR5 is designed to handle heavy. This same connector can be used for PCIe. DDR5-4800 4. Pixel Technology. DDR5-5600. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. 00. All you need and more. Micron® DDR5: Client Module Features. Find technical product specifications, features and more at Samsung Semiconductor. 1. De acuerdo a la información provista, el nuevo módulo Samsung DDR5 de 512 GB puede duplicar el rendimiento de un DDR4, llegando hasta un máximo de 7,200 megabits por segundo. Samsung M321RAGA0B20-CWK Memory 128GB DDR5 4800MHz RDIMM - MEM-DR512L-SL01-ER48. The 8-Hi stacks use through silicon via interconnects to ensure low. 1V. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. This item Samsung 32GB (2x16GB) DDR5 5600MHz High-Performance Gaming RAM PC5-44800 UDIMM Unbuffered Non-ECC 1Rx8 CL46 1. At Micron, we deliver opportunity for all with our unwavering commitment to our people, communities and planet. Samsung will reaffirm its leadership in the next-generation DRAM market by supplying the 12-nm-class 32Gb DRAM to data centers as well as to customers. Extreme innovation for stable performance. The cutting-edge speed enables huge transfers to be made at 51. The standard addresses demand requirements being driven by intensive cloud and enterprise data center applications, providing developers with twice the performance and much improved power. Learn about the features and specifications of Samsung's 8Gb C-die DDR4 SDRAM unbuffered DIMM, a high-performance memory module for desktop and server applications. com, a global distributor of electronics components. 1V) and VPP (1. That's why it is also popular in the network server field. Check part details, parametric & specs and download pdf datasheet from datasheets. 0°C to 85°C. Micron Technology, Inc. 2V compared with DDR3’s 1. defined in the component data sheet •Features and specifications defined in the Micron DDR5 RDIMM core data sheet •288-pin, DDR5 registered dual in-line memory module (DDR5 RDIMM) •Fast data transfer rate: PC5-4800, PC5-5600, PC5-6400 •48GB (6Gig x 80) •Dual-rank •32 internal banks; 8 groups of 4 banks each Figure 1: 288-Pin DDR5. Warranty. Find technical product specifications, features and more at Samsung Semiconductor. , Ltd. (IDT) and its affiliated companies (herein referred to as “IDT”) reserve the right to modify the products and/or specifications described herein at any time,. Standards & Documents Assistance: Published JEDEC documents on this website are self-service and searchable directly from the homepage by keyword or document number. Find technical product specifications, features and more at Samsung Semiconductor. Bit Organization 6. Micron LPDDR5X supports data rates up to 8. Part Number: M323R4GA3BB0-CQK Tested Frequency: 4800 Model #: M323R4GA3BB0-CQK Item #: 9SIAMBVJV72896 Return Policy: View Return Policy $149. 99. in the memory chips, dram chip category. LPDDR5 Memory Data Sheet. Density. CA includes all CA pins used for a given density. table for product spec finder. These parameters represent the logical address state of the CA bus for different commands. 1V. . Small Outline Dual In-line Memory Module. We’ve seen a few. Product Specifications PART NO. DDR4. 0 V power supply input and operates over a temperature range of -40°C to +85°C. Samsung Electronics Co. com, Tel : 82-31-208-6436 @sec. 1 lbs; Dimensions: 0. Designed for the latest high-performance systems. Advantech 16G DDR5-4800 288Pin 2GX8 1. Check part details, parametric & specs and download pdf datasheet from datasheets. M425R2GA3BB0-CQK(16 GB). DOWNLOAD. Samsung Electronics's K4G20325FD-FC04 is a dram chip gddr5 sdram 2gbit 64mx32 1. Crucial DDR5 provides the same lasting reliability as DDR4, even with the rigorous demands of next-gen computing. The same modules specified at Dell, HP, IBM and other OEMs. Samsung Electronics has developed its D1z 8GB DDR4,. Pin Count. These gains are essential to handle the most data-intensive workloads. DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Package K3LK2K20BM-BGCN. SSD Technology (6) Over-Provisioning Benefits for Samsung Data Center SSDs. • MRS cycle with address key programs. Without the datasheet for these ICs, at this time, it is recommended not to exceed 1. Lee 1. The same modules specified at Dell, HP, IBM and other OEMs. com, a global distributor of electronics components. FREE Returns . Depth. If you are looking for the data sheet of Samsung K4Z80325BC-HC14, a DDR SDRAM device with 2Gb density and 14ns speed, you can download it from this link. Table 3: Pin Assignments 262-Pin DDR5 SODIMM Front 262-Pin DDR5 SODIMM Back DDR5 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of sixteen banks. 99. Samsung took to its Tech Day. Brand. The SK Hynix includes 32 GB HMCG88MEBUA81N DDR5 UDIMM PC5–4800B module (H5CNAG8NM die). TechInsights compared DDR5 die size, bit density, DRAM cell size, and DR of DDR4–3200 and DDR5–4800 chips from Micron, Samsung, and SK Hynix as shown in Figure 1 through Figure 4. Unleash creative spirit with GDDR5's up to 9Gbps processing speed and 25% less power consumption in graphics performance in servers, workstations, and PCs. The new DRAM’s exceptional speed is matched by greater power efficiency. Samsung 8GB DDR5 4800MHz SODIMM PC5-38400 CL40 1Rx16 1. 45 36-46-46-82 32GB 2 Dual LGA1700 Corsair Core™ i9-13900K DDR5 0. GDDR5 K4G80325FC-HC25(8Gb). 26 mm 2) is smaller than Samsung’s (73. DDR5/4/3 training with write-leveling and data-eye training. This further improves the command/address, data bus efficiency and overall power profile. • LPDDR5 support three Bank organization. The first one is TeamGroup ELITE DDR5 UDIMM with 16 GB DDR5 devices in which the DDR5 MT60B2G8HB-48B:A chips are fabbed from Micron (Y32A die). Be the first to review this product. The FPD01 is designed for modules with low density; FPD02 for higher density. Finally. com, a global distributor of electronics components. Refer to the command truth table in the component data sheet. Part #: DDR-04-NH-BL. GDDR5 is generally referred to as quad data rate - the data rate is 4x the base clock for the memory system. Samsung Electronics's K4G41325FC-HC28 is a gddr5 sdram chip. Find technical product specifications, features and more at Samsung Semiconductor US. Features. RADID mode. Advertised Price. SK Hynix' data suggests that the slowest DDR5 memory will run at 3200 MHz while the fastest spans up to 8400 MHz as developments progress. DRAM. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. Actual product may be different. 00197 µm 2 versus Micron at 0. defined in the component data sheet •Features and specifications defined in the Micron DDR5 RDIMM core data sheet •288-pin, DDR5 registered dual in-line memory module (DDR5 RDIMM) •Fast data transfer rate: PC5-4800, PC5-5600, PC5-6400 •96GB (12Gig x 80) •Dual-rank •32 internal banks; 8 groups of 4 banks each Figure 1: 288-Pin DDR5. 日本 / 日本語 Products Solutions News & Events Sustainability Support About Us Global DRAM DDR Overview DDR5 DDR4 DDR3 Trusted reliability Fast data transfers for a. Find technical product specifications, features and more at Samsung Semiconductor. Operating Temp. This module is compliant to specifications for DDR5-4800 Registered DIMM performance in Intel® platform systems. 5v 170-pin fc-fbga. The new product, LPDDR5T, operates at a data rate of 9. Replacing a data center's DDR4 with DDR5 saves power of up to 1TWh annually. samsung. Samsung Electronics's K4G80325FC-HC25 is a dram chip gddr5 sdram 8gbit 256mx32 170-pin fbga. Deals of Desktop Memory. are unique to Micron 16Gb DDR5 Die Revision G [email protected] 8GB 262Pin SO-DIMM DDR5. We support your SAMSUNG DDR5-4800 SODIMM memory purchase long after the sale. SODIMM. This DDR5 RAM features a capacity of 32 GB for greater system stability and seamless operating. A single RISC-V powered Montage MXC CXL memory expander ties the DDR5 memory chips together, allowing 32, 64, 128, 256, or 512GB of DRAM to be placed on a single device that is roughly the same. Check part details, parametric & specs updated 09 OCT 2023 and download pdf datasheet from datasheets. 0 - First SPEC. Samsung Electronics's K4G20325FC-HC04 is a dram chip gddr5 sdram 2gbit 64mx32 170-pin fbga. Y. Refer to the Datasheet Refer to the Datasheet Column Bank Refresh Requirements AC Parameter Speed bin [Mbps] 667/800/1066 1600/1866/2133 Read/Write latency Refer to the Datasheet Refer to the Datasheet Core Parameters IO Parameters CA / CS_n / Setup / Hold / Deratin Data Setup / Hold / Deratin Special Function PASR Support ← TCSR Support ← In today's piece, we're looking at DDR5-4800 memory from Samsung, including 2 x 32 GB, 2 x 16 GB, and 4 x 16 GB, to measure the performance differences between single and dual rank memory, as well. Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements. In comparison to DDR4, Samsung's DDR5-7400 memory. S) form factor — especially suitable for next-generation high-capacity enterprise servers and data centers. Give users a high-performance LPDDR5 experience. Such gains reduce the number of servers needed for the same level of system performance. Powers next-generation applications with performance and efficiency. 採用 SAMSUNG 記憶體顆粒編號為 K4RAH086VB-BVQK，開首的 K 代表 SAMSUNG Memory、4 代表是 DRAM 產品， R 代表 DDR5 系統記憶體、 AH08 代表容量是 16Gb (2Gb x 8) 顆粒 ，緊接編碼為 6 代表 32 Banks 顆粒，V 代表工作電壓採用 PODL_11 介面， vDD、vDDQ 工作電壓均為 1. 2016 - J. Features • DDR5 functionality and operations supported as defined in the component data sheet. Device and DIMM architectures totally optimized for high performance in server applications. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 8 Gb through 32 Gb for x4, x8, and x16 DDR5 SDRAM devices. The Samsung SO-DIMM with manufacturer reference M425R1GB4BB0-CQKOL is a unbuffered SO-DIMM non-ECC DDR5 4800MHz 262Pin with 8GB capacity (1Gx64). SK hynix’s DDR5 supports transfer rate of 4,800 ~ 5,600 Megabit-per-second (Mbps), which is 1. Application : Laptop. 알맞은 검색 결과가 없습니다. Extreme innovation for stable performance. The memory features a total of 40 DRAM chips with. Data sheet: TPS53830 Integrated Step-Down Digital Converter for DDR5 On-DIMM Power Supply datasheet: PDF | HTML: 18 Aug 2021: Design & development. Rating * Name Email * Review Subject * Comments * $399. Compare the new advantages DDR5 offers over DDR4 with UDIMM and SODIMM modules. 1v. The G. 1 - Update referring to JEDEC DDR4 datasheet rev. RDQS, CK, and WCK should be interpreted as RDQS_t, RDQS_c, CK_t, CK_c, and WCK_t, WCK_c respectively unless specifically stated otherwise. , Ltd. These chips will enable the company to build 1TB DDR5 memory. Fast data transfers for a wide range of applications. 0 Revision History Revision No. Increased Data Rates A number of key feature additions and improvements enable. Samsung Electronics, the world leader in advanced memory technology, today announced that it has successfully developed the industry’s first. The new LPDDR5 is around 1. The same modules specified at Dell, HP, IBM and other OEMs. Kim described the implementation of a modified delay-locked loop (DLL) using a phase. Density 5. Changes with respect to PC1600/PC2100 Rawcard A0: A13 is wired, Supply Planes are swapped. With the increased transfer rate, the new LPDDR5 can send 51. General Information SDRAM February. Density. 3 times faster than the previous generation and 20% better power efficiency, premium low-power DRAM LPDDR5X is going beyond mobile - leading the low-power DRAM market. Samsung Teases 512 GB DDR5-7200 Modules. M425R1GB4BB0-CQKOL 8GB 262Pin SO-DIMM DDR5. Remark. Part # Part Number Made By Capacity Speed Form Factor Price; M425R4GA3BB0‐CQK:. Only 1. 58 mm 2) and SK Hynix’s (75. Features. SKU: CCM323R2GA3BB0CQK Weight: 0. Controller. Buy Samsung (K4RAH165VB-BCQK) DDR5 16Gb DRAM Memory Chip for your system. Details. Samsung D1z LPDDR5 chips. Manufacturer: Adam Technologies, Inc. 6 GB/s per chip provided by GDDR6X at 22. 2 /Nov. 1V (VDD) small outline, double data rate, synchronous DRAM dual in- line memory modules. Created Date:M425R2GA3BB0-CWM(DDR5). Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 VREFDQ 121 VSS 42 DQS8162 NC,DQS17,TDQS17. 4G bits GDDR5 SGRAM Samsung semiconductor: K4G323222A: 1Mb / 49P: 32Mbit SGRAM Keysight Technologies: U7245A: 2Mb / 9P: U7245A GDDR5. Of course, your overclocking mileage will vary, making the Samsung DDR5-4800 memory one of those high-risk, high-reward products. The performance enhancements and TCO savings over DDR4 realize greater value for customers, while the 20% smaller power footprint delivers value for the environment and. Features. 40. Find technical product specifications, features and more at Samsung Semiconductor. Key Features. in the memory chips, dram chip category. 8V), with optional 4th Output (VDD2). Availability: 1420 units In Stock. 5 Unbuffered SODIMM Revision History Revision No. Add To Cart Photo is for illustration purposes only. samsung. 2. Price (USD): $135. are unique to Micron 16Gb DDR5 Die Revision A device. The manual includes operation timing diagrams, command descriptions, power management, and reliability aspects of the DDR4 devices. akamaihd. For further details on product specifications, please contact the sales representative of your region. Lee 1. Model #: M425R1GB4BB0-CQK Item #: MEMSAM425R1R. Samsung's DDR5-4800 C40 memory module retails for $153. Find technical product specifications, features and more at Samsung Semiconductor. Share. Samsung Solid State Drive. History Draft Date Remark Editor 1. Samsung 16GB PC5-38400 DDR5 4800 MHz SODIMM Laptop Memory RAM (M425R2GA3BB0-CQK) Condition: Brand: Samsung Type: DDR5 SDRAM Form Factor: SO-DIMM Number of Pins: 262 Number of Modules: 1 Bus Speed: PC5-38400 (DDR5-4800) Capacity per Module: 16 GB Total Capacity: 16 GB Memory Features: DDR5 Native ECCHigher Bandwidth, Faster Speeds. Details. 2 gigabytes (GB) of data, or approximately 14 full-HD video files (3. Explore For All at MicronCT16G56C46S5 is the Crucial 16GB DDR5 laptop module that operates at the speed of 5600MHz and has a CAS latency of 46. The company revealed its 16Gb DDR5 DRAM chips and said that they've already been evaluated for compatibility with AMD's Zen processors. LPDDR5 brings a new height of speed to mobile and automotive devices. 1v. Find technical product specifications, features and more at Samsung Semiconductor. Table 2: Part Numbers and Timing Parameters – 64GB Modules Base device: MT60B4G4,1 16Gb DDR5 SDRAM Die Revision A Notes:1. Proven DRAM module solutionin the global market. This week as part of the annual Hot Chips semiconductor conference, Samsung’s memory division has presented a poster/slides on a project it is currently. 2016 1. Last updated on: February 1, 2023 On July 14 th, 2021, JEDEC announced the publication of the JESD79-5 DDR5 SDRAM standard signaling the industry transition to DDR5 server and client dual-inline memory modules (DIMMs). 2 GB/s. 0 COMPARISION BETWEEN LPDDR3 AND LPDDR4 Items LPDDR3 LPDDR4 Feature CLK scheme Differential (CLK/CLKB) å Data scheme DDR Single-ended, Bi-Directional å DQS scheme Differential (DQS/DQSB), Bi-Directional å ADD / CMD scheme DDR SDR State Diagram Refer to the Datasheet Refer to the Datasheet Now 1. DRAM Type 4. Advantages of DDR5. Crucial DDR5 takes an extreme step forward in engineering over the previous generation with two independent 32-bit channels per module for optimized performance 7. RDQS, CK, and WCK should be interpreted as RDQS_t, RDQS_c, CK_t, CK_c, and WCK_t, WCK_c respectively unless specifically stated otherwise. $109. Package. Samsung. Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will help unlock speeds of up to 7. 7GB each), in a second. Buy Samsung (K4RAH165VB-BCQK) DDR5 16Gb DRAM Memory Chip for your system. com. - 2 - Product Guide DDR4 SDRAM Memory May. M321RBGA0B40-CWK(DDR5). NB #3: When googling for datasheets add ED to the part number, eg EDW2032BABG. 66 100 9,419 9,967 Dual Color Box Model Bulk+HS Weight (g) Retail Weight (g) Color Box Dimensions (LxWxH/mm) Carton. Samsung 1x8GB DDR5 4800MHz PC5-38400 SO-DIMM NON-ECC OEM Memory M425R1GB4BB0-CQK. 5 times faster than the previous generation*, Samsung's LPDDR5 reaches a pin speed of 6,400 Mbps**. The LPDDR5X DRAM will. com, a global. Mobility Innovation. 32GB (x72, ECC, DR) 288-Pin DDR4 RDIMM Features CCMTD-1725822587-9795. This will result in much cheaper manufacturing costs as well as a. Samsung has unveiled the world's first DDR5 DRAM chips that are made using 12nm semiconductor fabrication technology. Throughout the data sheet, figures and text refer to DQs as DQ. RDIMM DDR5 4800 16G Page 4 of 24 1. It is organized with 4 1Gx16 DRAM (Dynamic Random Access Memory). in the memory chips, dram chip category. Warranty. - 2 - Product Guide DDR3 SDRAM Memory Oct. The cutting-edge speed enables huge transfers to be made at 51. in the memory chips, dram chip category. CES 2023. Module. Various products, Environments, and characteristics of tools can cause errors and affect test results. Doubling the burst length to 16 enables higher data rates and bus efficiency. Revision No. 30μ” Gold Finger. Photo is for illustration purposes only. Furthermore, following the release earlier this year of CPUs that support DDR5, tremendous change is expected in. Condition: Refurbished. 0 x16 link, allowing for a theoretical bidirectional 32 GT/s, but with multiple TB of. Supermicro certified to ensure performance and reliability. Micron has more advances in cell size and bit density on DDR5 compared to. The new ICs will be mass produced next year using the company's latest. Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first and highest-capacity 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology. K4G20325FD-FC04 - Samsung - Memory - 2Gbit GDDR5 SGRAM 2500MHz 170-FBGA - K4G20325FD-FC04 Created Date: 20121120134533Z. GDDR5 K4G80325FB-HC28 (8Gb). Jp7188. DDR5 Registering Clock Drivers (RCD), Serial Presence Detect Hubs (SPD Hub) and Temperature Sensors (TS) are. DDR5-5200. com,. . results + Customize Columns. The on-DIMM PMIC further boosts power management efficiency and. Samsung’s unveiling today is of a CXL-attached module packed to the max with DDR5. Release 23th Jun, 2016 - J. Pin Name Description Number Pin Name Description Number CK0, CK1 Clock Inputs, positive line 2 DQ0-DQ63 Data Input/Output 64Samsung Samsung M323R2GA3BB0-CQK DDR5-4800 MHz 16GB (1x 16GB) Single Rank x8 PC5-38400R OEM. Beyond capacity, there are different generations of RAM. サムスン電子、「Dell Technologies Forum」で環境に優しい革新のビジョンを掲げた「技術を持続可能にする技術」について基調演説、超接続社会に最適化された次世代メモリーソリューションを提示. DOWNLOAD. The transition from DDR4 to DDR5 represents far more than a typical DDR SDRAM generational change. Directory Author: Samsung Subject: 1Gbit GDDR5 SGRAM 2000MHz 170-FBGA - K4G10325FE-HC05 Keywords: K4G10325FE-HC05 - Samsung - Memory - 1Gbit GDDR5 SGRAM 2000MHz 170-FBGA - K4G10325FE-HC05Get Lifetime warranty Great savings Buy factory original SAMSUNG M321R4GA0BB0-CQK memory modules. Supermicro certified to ensure performance and reliability. Notes: 1. I/O pads with impedance calibration logic and data retention capability. Figure 1: 288-Pin DDR5 RDIMM (R/C-A0) Notes:1. Find technical product specifications, features and more at Samsung Semiconductor US. Company. This achievement comes after Samsung began mass production of its 12 nm-class 16Gb DDR5 DRAM in May 2023. Operating Voltage. The device is fabricated in a 1ynm, 4-metal DRAM process. The overclocking community has also shrugged it off because of the mediocre performance in comparison to SK Hynix. JEDEC has published two updates to the DDR5 spec. Samsung Original Chip; Dual 32-bit Subchannels; Increased Banks and Burst Length; DDR5 4. GDDR5 K4G80325FC-HC22 (8Gb). com-专业的综合网上购物商城，为您提供正品低价的购物选择、优质便捷的服务体验。商品来自全球数十万品牌商家，囊括家电、手机、电脑、服装、居家、母婴、美妆、个护、食品、生鲜等丰富品类，满足各种购物需求。Extreme innovation for stable performance. 1V SO-DIMM 262-Pin Gaming Busines Home Laptop Notebook RAM Memory Module (M425R1GB4BB0-CQK) (OEM) Crucial RAM 32GB DDR5 4800MHz CL40 Laptop Memory CT32G48C40S5. 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